35×4 Substates of DX Centers in AlGaAs:Si

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DX centers in AlAs and GaAs-AlAs selectively doped superlattices

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Localized vibrational modes in GaN:O tracing the formation of oxygen DX-like centers under hydrostatic pressure

Vibrational modes are observed at ambient pressure in O-doped GaN at 544 cm using Raman spectroscopy. Investigation of these modes with applied hydrostatic pressure reveals the existence of three closely spaced modes that shift in relative intensity with increasing pressure. Notably, transitions between the different modes occur at previously observed electronic transitions associated with the ...

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Correlation of vibrational modes and DX-like centers in GaN :O

Vibrational modes in O-doped GaN have been observed at 544 cm~1 in Raman spectroscopy. Under perturbation of large hydrostatic pressure the mode appears as a set of three di!erent lines Q 123 whose relative intensities change by pressure. A switching between the modes occurs near 10 and 20 GPa and is found to correlate with the electron capture process to the DX-like state of O. We employ a sim...

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DX-centers in CdTe and ZnTe observed by locally sensitive probe atoms

Heavily In-doped CdTe and ZnTe crystals are investigated using perturbed γγ-angular correlation experiments. By means of characteristic electric field gradients, it is shown that in the Cd (Zn) poor regime, the compensation is governed by A-center formation. After annealing in Cd (Zn) rich atmosphere, the formation of DX-centers is observed and identified as the prevailing compensation mechanis...

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ژورنال

عنوان ژورنال: Acta Physica Polonica A

سال: 1993

ISSN: 0587-4246,1898-794X

DOI: 10.12693/aphyspola.84.765